Performance Comparison of a Novel Extreme Triple Asymmetric AlGaInP Laser Diode with Conventional Symmetric Structure

In this study, for the first time, improved radiative recombination rates of a red AlGaInP laser diode are demonstrated by introducing a new extreme triple asymmetric waveguide structure. Raditive and non- radiative recombination rates of the conventional symmetric and the new extreme triple asymmetric laser structures are theoretically investigated using simulation software Photonic Integrated Circuit Simulator in 3 dimensions. 3 dimensional simulations of carrier transport, optical wave-guiding and self-heating are combined self-consistently in the software. Numerical results show that when the ETAS structure is used, the stimulated recombination rate is remarkably increased and the device exhibits higher optical gain, a lower Auger recombination rate when compared with conventional symmetric structure. The Spontaneous recombination and the SRH recombination also decreases. So the new suggested structure controls effective recombination rates well.

کلیدواژه ها:

AlGaInP laser diode ، Simulation ، Extreme triple asymmetric waveguide ، Recombination rate ، PICS3D