A Sammak - ECE Department, University of Tehran
S Azimi
S Mohajerzadeh
H Hosseinzadegan

A novel method for the fabrication of silicon nanostructures on silicon substrates is reported. This technique relies on a hydrogenation-assisted high aspect ratio plasma etching of Silicon substrates capable of producing nanowires with the height of more than 15 micrometers and width of between 100nm and 600nm

Silicon Nanowire; Plasma Etching; Vertical Transistor;