Displacement Fields Influence Analysis Caused by Dislocation Networks at a Three Layer System Interfaces on the Surface Topology

This work consists in a numerically evaluation of elastic fields distribution, caused by intrinsic dislocation networks placed at a nanometric trilayers interfaces, in order to estimate their influence on the surface topology during heterostructure operation. The organization of nanostructures is ensured by the knowledge of different elastic fields caused by buried dislocation networks and calculated in the case of anisotropic elasticity. The influence of elastic fields generated by induced square and parallel dislocation networks at CdTe / GaAs / (001) GaAs trilayer interfaces was investigated. By deposition, the nanostructures organization with respect to the topology was controled.             

کلیدواژه ها:

Interface ، network ، Nanometric ، Dislocation ، Elastic field ، Anisotropic elasticity