Gholamreza Ardeshir - Elect & Computer Engineering, Babol Nooshirvani University of Technology
Sepideh Valiollahi - Electerical & Computer Engineeing, Babol University of Technology

A simple general-purpose I-V model for all operating modes of deep-submicron MOSFETs is presented. Considering the most dominant short channel effects with simple equations including few extra parameters, a reasonable trade-off between simplicity and accuracy is established. To further improve the accuracy, model parameters are optimized over various channel widths and full range of operating voltages using a heuristic optimization algorithm. The obtained results demonstrate only 1.28% and 0.97% average error in IBM 0.13um CMOS technology for NMOS and PMOS, respectively, comparing with the accurate physically-based BSIM3 model. Furthermore, the tolerance of the model accuracy against parameters variation is investigated.

deep submicron, heuristic optimization, MOSFET modeling, nth, Power law model, short channel effects, Sub, threshold current