S.I Mekhtiyeva - Institute of Physics of Azerbaijan National Academy of Sciences, Baku, Azerbaijan
A.I Isayev
R.I Alekperov
G.K Akberov

The paper investigates the method IR of spectroscopy of amorphous selenium and system Se95As5 containing impurity samarium. It is certain that, in IR a spectrum of amorphous selenium due to hypervalent defects maxima with different intensity are observed in 230 and 270 cm-1. Addition to selenium of arsenic (5 аt%) leads to occurrence of two additional peaks in highfrequency area (613 and 790 cm-1). It is established, that these facts are connected structural units As(Se1⁄2)3 in glass. Increase of the concentration of impurity samarium in spectrum Se95As5, the maximum arises with 400cm-1 frequency which, are connected with SmSe3 structural elements.

Glass-Like Semiconductor, Charged Defects,Amorphous