M.r ramezani - Department Electronic Engineering, Hkiim Sbzevari University,
m.h shahrokh abadi - Department Electronic Engineering, Hkiim Sbzevari University,

In this paper focuses on the design of a MESFET with silvaco software. About how to build a mesfet gallium arsenide with dimensions of 3 x 2 µm, the diffusion impurities and deposit required for the production of technology piece 1 µm. Normally open channel MESFET and the voltage increases in the negative direction causing obstruction of the channel. Importantly; the use of silicon as a material doping. By adjusting the amount of energy; put in instead of gallium atoms or instead of arsenide atoms too. All processes and simulation done at silvaco software part athena. The problem is relatively high leakage current and large dimensions. Finally, using the atlas to ensure working properly the functioning piece. Due to limitations of the technology in iran.; objective design manufacturable device

Gaas,silivica,simoltion,mesfet