Analysis and Simulation of Noise Effect in Carbon Nanotubes Transistors with dielectric constants of Al2O3 and HfO2

سال انتشار: 1397
محل انتشار: سومین کنفرانس بین المللی مهندسی برق
کد COI اختصاصی: ICELE03_148
زبان مقاله: انگلیسی
تعداد مشاهده: 425

نویسندگان

Faculty of Electrical, Biomedical and Mechatronics Engineering, Qazvin Branch, Islamic Azad University, Qazvin, Iran

چکیده

Carbon nanotubes are large molecular wires that electrons can move freely in it. These components can work at thesame time as electronic circuits much faster and with less power than current circuits and the thermal conductivity ofcarbon nanotubes in the tubes rather than the perpendiculars has allowed these compounds to exhibit potential in theNano electronics of the thermal trenches. The purpose of this research is to analysis and simulate the effect of Flickernoise in CNT transistors. It has also introduced a structure to create less noise. Then, simulation of carbon nanotubestransistors with MATLAB has been investigated and its structural parameters have changed and its effect on thetransistor performance has been studied too. To do this, we first performed simulations for carbon nanotubes transistorsof field effect, on the oxide gate with a constant of 10 and 16 then simulated and analyzed each of the oxidizing gates inthe thicknesses of 2 and 4 nm. It is predicted to reduce the dielectric constant and the thickness of the oxidation ofFlicker noise oxidation, as the probability of trapping the carrier decreases. Finally, it will be determined which oxidegate has less noise due to its flicker noise. Eventually, we found that the Flicker noise in the dielectric constant 16 hasthe highest value, after the constant 10 which have the lowest noise level.

کلیدواژه ها

carbon nanotube, transistor, noise, oxidizing gate

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