Analysis, Design and Characterization of a Novel Ultra-broadband, High gain and High Linearity Distributed Amplifier in 0.13-μm CMOS Technology

  • سال انتشار: 1397
  • محل انتشار: سومین کنفرانس بین المللی مهندسی برق
  • کد COI اختصاصی: ICELE03_094
  • زبان مقاله: انگلیسی
  • تعداد مشاهده: 370
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نویسندگان

Zainab Baharvand

Department of Electrical and Electronic Engineering, Zanjan University, Zanjan, Iran

Habibollah Zolfkhani

Department of Electrical and Electronic Engineering, Zanjan University, Zanjan, Iran

چکیده

In this paper the analysis, design and characterization of an ultra-broadband, high gain and high linearityCMOS distributed amplifier (CMOS-DA) are presented. The proposed design shapes based on a new gain-cell thatadopts multiple techniques to substantially increase the gain. Combining the current reuse, active cascode, andinductively coupled cascaded techniques in designing the new gain cell leads to a significantly high gain CMOS-DA.The proposed CMOS-DA is simulated in a 0.13 μm CMOS process and is capable of operating at two modes includinghigh gain (HG) and low gain (LG) modes. Simulation results at the HG mode, illustrate a high power gain response of20 dB and a 3-dB bandwidth of 12 GHz and also, at LG mode achieve a 3-dB bandwidth of 14.5 GHz whit a powergain of 13.5 ± 0.4 dB. The simulated average noise figure (NF) for HG mode is 5 dB and 6 dB for LG mode,respectively. The IIP3 and input referred 1-dB compression point are simulated that achieve +11 dBm and -14 dBm at 6GHz at HG mode and obtain +12.3 dBm and -12 dBm at 7 GHz at LG mode, respectively. The power consumption of93.6 mW from a 1.2 V drain line’s supply at HG mode and 23.47 mW from a 0.9 V at LG mode are dissipated. Inputand output matching in the both HG and LG modes are less than -10 dB over the desired bandwidth. To the best of ourknowledge, it has one of the highest gain and linearity reported, and is competitive in power consumptions and NF thatof previously CMOS-DAs in the literatures.

کلیدواژه ها

active cascode amplifier; CMOS distributed amplifier; ultra-broadband; high-gain; high linearity

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