Graphene Quantum Dot doping with B3- F3- N3 and H6: DFT Study

سال انتشار: 1397
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 317

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شناسه ملی سند علمی:

ISPTC21_149

تاریخ نمایه سازی: 30 دی 1397

چکیده مقاله:

Graphene has semimetal behaviors with remarkable electronic transport properties andunusual thermal, optical and mechanical characteristics. Perfect graphene is not suitable fordesalination since it is impermeable. To make graphene monolayer sheets permeable to waterand impermeable to ion particles, and bacteria, pores of suitable sizes must be created [1].Nanopores on graphene for desalination applications can be created by ion bombardment,electron beam exposure, ion beams, ultraviolet induced oxidative etching, oxygen plasmaetching, etching by hydroxyl radicals, by swift heavy ions, or by doping [2,3]. We designed aseries of porous graphene and doped them with B,N and H. In this contribution, we performedcalculations to investigate energies ,band gap and frequencies, HOMO-LUMO, NBO analysis forthese structures: Perfect Graphene Quantum Dot , Gr.B3, Gr.N3 , Gr.F3 and Gr.H6. results forHOMO-LUMO gap are 3.42, 0.06, 0.002, 3.09, 2.61 ev, Respectively. All of them are instationary state.

نویسندگان

Seyedeh Shabnam Daryabari

Department of Chemistry, Faculty of Science , Islamic Azad University , Center Tehran Branch, Tehran

Javad Beheshtian

Department of Chemistry, Faculty of Science, Shahid Rajaee Teacher Training University, P.O. Box: ۱۶۸۷۵-۱۶۳, Tehran, Iran

Sakineh Mansouri

Department of chemistry , Faculty of Science,Islamic Azad University, Central Tehran Branch, Tehran

Mehrnoosh Karimkhani

Department of chemistry , Faculty of Science,Islamic Azad University, Central Tehran Branch, Tehran