Design and Simulation of an RF MEMS switches in III-V Technology for Removing the Self-Actuation and Latching Phenomena

In this work we understood self-actuation and latching phenomena of RF MEMSswitches in III-V technology by apply different kind of waveform. Tantalum nitride (TaN) andtantalum pentoxide (Ta2O5) to be used for the switches actuation pads and dielectric layers,respectively. These materials are good alternative to silicon. A comprehensive cycling test iscarried out under the application of different unipolar and bipolar polarization waveforms. Thenwe suggested a new method for omit self-actuation and latching of RF MEMS switches in III-Vtechnology. Simulation result showed better switches parameter and increase reliability.

کلیدواژه ها:

reliability ، self-actuation ، latching phenomena ، III-V technology ، RF MEMS switches