Analysis of Ambient Temperature Effects on Efficiency Characteristics of InAsP/InGaAsP Multi Quantum Well BTJ-VCSELs

In the present paper, with consideration of a comprehensive optical-electrical-thermal-recombination self-consistent model of 1.3 μm InAsP/InGaAsP multi quantum well (MQW) buried tunnel junction vertical cavity surface emitting diode lasers (BTJ-VCSELs), the ambient temperature effects on their efficiency characteristics investigated. For 5 μm devices, the room temperature (RT) wall plug efficiency and differential quantum efficiency equal to 12% and 40.6%, respectively. For this device, the slope efficiency of the devices decreases from 0.239 to 0.137 W/A over the temperature range of 290-380 K.

کلیدواژه ها:

Wall plug efficiency ، Differential quantum efficiency ، Multi quantum well ، BTJ-VCSELs