Unequal CNFET Buffer Insertion along CNT Semiglobal Interconnects for Power Delay Product Optimization

Resistivity of copper increases with scaling and there is growing demands to identify new wiring solutions for ULSI technologies. Carbon Nanotubes with the special properties are the best candidate for copper replacement in interconnects. As the physical gate length of current devices is reduced, short channel effects degrade performance of the MOSFET transistors. CNFET (Carbon Nanotube Field Effect Transistor) with proper characteristics is a promising suggestion for replacing CMOS transistors. Buffer insertion is performed for delay reduction of interconnects. Increase the number of CNTs per device in order to increase the total current drive. In this paper, I improve Power Delay Product of semiglobal interconnects by application CNT interconnects instead of copper besides unequal CNTFET buffer insertion which is performed between equal portions along semiglobal interconnect. Increasing number of CNTs per CNFET increases speed of device so I used unequal buffers in CNT numbers for optimization Power Delay Product. Extracted results from HSPICE reveals that increasing number of unequal CNFET buffer along semiglobal SWCNT interconnects reduce Power Delay Product.

کلیدواژه ها:

Carbon Nanotube ، SWCNTs ، CNFET transistor ، Buffer Insertion ، Power Delay Product Optimization ، Semiglobal Interconnect ، Unequal CNFET buffers