3Synthesis and Investigation of BaTiONanocomposite as a Gat Dielectric

سال انتشار: 1395
محل انتشار: کنفرانس بین المللی پژوهش در علوم و مهندسی
کد COI اختصاصی: ICRSIE01_412
زبان مقاله: انگلیسی
تعداد مشاهده: 714

نویسندگان

Graduated student, Department of Solid State Physics, University of Mazandaran, Babolsar, Iran;

Professor of nanotechnology, Department of Solid State Physics, University of Mazandaran, Babolsar, Iran

چکیده

In this research, BaTiO3 nanocomposite was prepared by sol-gel method. The materials were used in this synthesis were barium acetate (Ba(C2H3O2)2.H2O), tetrabutyl titanate (C16H36O4Ti), isopropyl alcohol (C3H8O) and glacial acetic acid (CH3COOH). Structural properties and surface morphology of the samples were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Fourier Transfer Infrared Radiation (FTIR) respectively. Energy dispersive X-Ray spectroscopy (EDX) was used to make a quantitative chemical analysis of unknown materials. Electrical properties were measured by a metal-dielectric-semiconductor via Capacitance-Voltage (C-V). Resistor (R), Capacitance (C), Dielectric Constant (k), Quality Factor (QF) and Dissipation Factor (DF) have been measured for all samples with LCR meter. The results showed that BaTiO3 nanocomposite at T3=150°C (sample 3) can used as a good gate dielectric of MOSFETs because of lower leakage current and its less fracture surface. The highest amount of k was ~ 6.9 for BaTiO3 nanocomposite at T3=150°C (sample 3).

کلیدواژه ها

Sol-gel method, MOSFET, gate dielectric, BaTiO3 nanocomposite

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