Batol Fakhr - Department of Electrical Engineering, Neyshabur Branch, Islamic Azad University, Neyshabur, Iran
Seyed Ebrahim Hosseini - Department of Electrical Engineering, Mashhad Branch, Ferdowsi University, Mashhad, Iran

scaling length for Tri-gate SOI junctionless FinFET through 3-D device simulation is presented. SCEs of FinFETs can be controlled by changing the gate length. Changing channel length is between 10 to 100 nm. output characteristics, transfer characteristic, threshold voltage, subthreshold slope and drain induced barrier lowering (DIBL), gm, ION/IOFF ratio, ro are investigated.

FinFET, SOI, SCEs, Junctionless, Vth, ION/IOFF ratio, gm, DIBL, subthreashold slop