Switching effect on the surface of a topological insulator attached with a ferromagnetic insulator

We study theoretically how the conductance of Dirac fermions on the surface of a topological insulatorattached with a ferromagnetic insulator where the direction of the magnetization is perpendicular to the surface ismanipulated by the induced exchange field and applied gate voltage. We find that the conductance of this systemexhibits a good switching characteristic. The perpendicular magnetization gives rise to a conductance gap the positionof which can be tuned by the gate voltages, indicating that the considered system if used as an electric switch or fieldeffect transistor will provide a high on/off ratio.

کلیدواژه ها:

Switching effect ، Topological insulator ، Ferromagnetic insulator ، Conductance ، Field effect transistor