Transport in Graphene Spin Transistors

Abstract:In this paper, we study spin-dependent electron transport in graphene nanoribbon field effecttransistors(GNR FET). Our calculations are based on the tight-binding model with the nearest neighboursinteraction and the Green's function approach in which the spin-dependent conductance and the spinpolarization degree of the system are numerically calculated. By controlling the magnetic moment ofimpurities in the device, spin- up state can be separated from the down spin one and it can be controlledthe polarization degree. This system acts as a spin filter, and has important applications in the spintronic.

کلیدواژه ها:

Transport ، Spin ، Tight-binding model ، Field effect transistor ، Graphene nanoribbon