Roya Noran - Department of Electrical Engineering, Khorasan Institute of Higher Education UniversityMashhad, Khorasan Razavi, Iran

We study the I-V characteristics of single gate junctionless fieldeffect transistor by device simulation. The sample FET issimulated at different channel lengths and the I-V curve changesdue to variations of and channel length have been systematicallyanalyzed. The new approach exhibited here utilizes a GeneticAlgorithm to select the important physical and heuristic elementsin order to define a compact yet precision model for Single GateJunctionless Field Effect Transistor characteristic. The resultsshow that the mean absolute percent error (MAPE), root-meansquaredeviation (RMSD) and standard deviation error (SDE)were at an acceptable level

Single Gate, Junctionless Field EffectTransistor, Device Simulation, Genetic Algorithm