New Design 1-Bit Full Adder Using GDI and MOSCAP

سال انتشار: 1391
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 990

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شناسه ملی سند علمی:

ISFAHANELEC01_086

تاریخ نمایه سازی: 23 اسفند 1392

چکیده مقاله:

In this paper, we present a new 1-bit full adder cell design with two separate parts, one of them is GDI block andother is majority block that lead to have a reduced power-delay product (PDP). All of the capacitors in this paper replaced with MOSCAP. the new adder cell is simulated at tsmc 0.18 um coms technology. using HSPICE and compared against other energy-efficient full-adders reported recently

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نویسندگان

S Araghian

Sadjad institute of higher education of Mashhad, Iran

H.R. Naghizadeh

Sadjad institute of higher education of Mashhad, Iran.

A Golmakani

Sadjad institute of higher education of Mashhad, Iran