Electrodeposition of Ni۳Bi۲Se۲ Thin Semiconductor Films

سال انتشار: 1400
محل انتشار: Iranian Journal of Chemistry and Chemical Engineering، دوره: 40، شماره: 4
کد COI اختصاصی: JR_IJCCE-40-4_003
زبان مقاله: انگلیسی
تعداد مشاهده: 31

نویسندگان

Institute of Catalysis and Inorganic Chemistry, Named after Acad. M. Nagiyev NAS, AZERBAIJAN

چکیده

The present contribution is devoted to the production of the Ni-Bi-Se thin films widely used in the field of electronics, electrotechnology, and computer technology. During the process, at first, the Bi-Se compound has been formed on the nickel electrode by electrochemical method, and then by thermal treatment of this compound at ۶۷۳K, ternary compound Ni۳Bi۲Se۲ has been obtained. The results show that as the concentration of bismuth is increasing, its amount in deposited films increases regularly. The formation of the Ni۳Bi۲Se۲ compound was also confirmed by XRD results. The photochemical properties of the obtained compounds were investigated in the dark and light, constant current of ۱۰۰ nA for ۰-۶۰۰ seconds. With the illumination of the dark samples, the potential shifts from a positive side to a negative side, this decrease indicates that obtained thin films are not only photosensitive, also have n-type conductivity.

کلیدواژه ها

Ni۳Bi۲Se۲, Electrodeposition, Chemical compounds, thermoelectric materials

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