Yasser Mafinejad - School of Engineering , Deakin University, Geelong, VIC ۳۲۱۶, Australia
Majid Zarghami - MEMS and RF MEMS Research Group, School of Electrical and Computer Engineering, Sadjad Institute
Abbas Z. Kouzani

Increasing the capacitance ratio in RF MEMS shunt capacitive switch will increase its RF performance but also raise its actuation voltage. To improve the RF performance of the switch without increasing its capacitance ratio, this paper explores two methods: reducing the LC resonance from the mm-wave into the X-band by using an inductive bridge, and using two short high impedance transmission lines at both ends of the CPW line. Accordingly, this paper presents the design and simulation of an electro-static low actuation voltage and a very high isolation multipurpose switch with a very large bandwidth. The simulation results are presented and discussed

RF MEMS switch, meander, short high impedance transmission line (SHITL), low actuation voltage