Reza Abbasnezhad - Department of Electrical Engineering, Shabestar Branch, Islamic Azad University, Shabestar, Iran.
Sadra Asghari - Department of Electrical Engineering, Azarshar Branch, Islamic Azad University, Azarshar, Iran.
Hadi Pourkavous - Department of Electrical Engineering, Urmia Branch, Islamic Azad University, Urmia, Iran.

This study presents a version of the Gate All Around Nanosheet Field Effect Transistor (GAA NS FET) incorporating source heterojunctions and strained channels. We compare its performance with the Heterojunction GAA NS FET and the Conventional GAA NS FET, examining their electrostatic control effects on key parameters like gate capacitance, transconductance, and cut-off frequency. Our heterojunction GAA NS FET utilizes Germanium for the source, Silicon/Germanium/Silicon (Si/Ge/Si) for the channel, and Silicon for the drain. By integrating strain and adopting a heterojunction structure, we significantly enhance device performance. Before analyzing semiconductor devices, accurately determining model parameters is crucial. We use various equations to derive the electrostatic potential, estimate carrier generation, and account for transport behavior and recombination effects. Overall, our results show substantial improvements in drain current, transconductance, and unity-gain frequency, leading to superior RF performance compared to the conventional GAA NS FET.

Nanosheet, Gate All Around FET, On-state, Off-state.