Design of Binary-to-Quaternary Converters based on CNTFET Transistors
عنوان مقاله: Design of Binary-to-Quaternary Converters based on CNTFET Transistors
شناسه ملی مقاله: JR_MJEE-18-1_007
منتشر شده در در سال 1403
شناسه ملی مقاله: JR_MJEE-18-1_007
منتشر شده در در سال 1403
مشخصات نویسندگان مقاله:
maryam ghelichkhani - Department of Electrical Engineering, College of Technical & Engineering, West Tehran Branch, Islamic Azad University
Seied Ali Hosseini - Department of Electronic, College of Electrical Engineering, Yadegar-e-Imam Khomeini(RAH) Shahre Rey Branch, Islamic Azad University
Seyyed Hossein Pishgar Komleh - Department of Electrical Engineering, College of Technical & Engineering, West Tehran Branch, Islamic Azad University
Alireza Siadatan - Department of Electrical Engineering, College of Technical & Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran
خلاصه مقاله:
maryam ghelichkhani - Department of Electrical Engineering, College of Technical & Engineering, West Tehran Branch, Islamic Azad University
Seied Ali Hosseini - Department of Electronic, College of Electrical Engineering, Yadegar-e-Imam Khomeini(RAH) Shahre Rey Branch, Islamic Azad University
Seyyed Hossein Pishgar Komleh - Department of Electrical Engineering, College of Technical & Engineering, West Tehran Branch, Islamic Azad University
Alireza Siadatan - Department of Electrical Engineering, College of Technical & Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran
In order to connect two binary and quaternary systems, it is necessary to use binary-to-quaternary (B۲Q) and quaternary-to-binary (Q۲B) converters. These converters convert numbers from logic ۲ to ۴ and vice versa. In this paper, we designed a new binary-to-quaternary converter circuit using CNT transistors. In this circuit, the Power Delay Product (PDP) has been reduced to۱۴.۵۹% and ۱۵.۳۹% compared to best previous works (Ref [۲۲] and Ref [۲۳]). Also, this circuit has better driving ability and temperature stability than best previous works. The simulation results using Stanford's ۳۲ nm CNTFET model in HSPICE software are at a voltage of ۰.۹ V.
کلمات کلیدی: CNTFET, multi-level circuit, B۲Q Converter, mixed radix system
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/1967081/