F. Peyravi - Department of Electrical Engineering, Ferdowsi University of Mashhad, Iran
S. E. Hosseini - Department of Electrical Engineering, Ferdowsi University of Mashhad, Iran

An accurate analytical model is presented for drain current of the heterojunction tunneling field effect  transistor, taking into account the source depletion region, mobile charges and the effect of the drain voltage. This model accurately predicts the potential distribution not only on the surface but also within the semiconductor depth by utilizing newly formulated mathematical relationships. Using the tangent line approximation method and considering the channel region as well as the source depletion region’ We analytically calculate the band-to-band tunneling current from the source to the channel by integrating the tunneling generation rate. Compared to simulation results, the proposed model demonstrates significant accuracy in predicting drain current.

Analytical model, Heterojunction Tunneling Field Effect Transistor, Band-to-band tunneling, Tangent line approximation