Optimization study to determine the appropriate location for the implementation of silicon doping in Tehran research reactor
- سال انتشار: 1402
- محل انتشار: فصلنامه فیزیک و مهندسی پرتو، دوره: 4، شماره: 4
- کد COI اختصاصی: JR_RPE-4-4_002
- زبان مقاله: انگلیسی
- تعداد مشاهده: 119
نویسندگان
Department of Radiation Application, Shahid Beheshti University, Tehran, Iran
Department of Radiation Application, Shahid Beheshti University, Tehran, Iran
Reactor and Nuclear Safety Research School, Nuclear Science and Technology Research Institute (NSTRI), Tehran, Iran
چکیده
The neutron transmutation doping method is widely used in various fields, such as solar cells, hybrid cars, etc. The Silicon doping process can provide direct commercial income for nuclear research reactors. In this study, we aim to find the optimal location for silicon doping in the thermal column nose of the Tehran research reactor. For this purpose, computational MCNPX and ORIGEN۲ codes were used to calculate the neutronic and radioactivity parameters of the silicon ingot. The important parameters such as the thermal to fast neutron ratio, heat deposition by gamma and neutron, and the radioactivity level of the silicon ingot and the produced radioisotopes have been determined to obtain the optimal irradiation channel. The results showed that the irradiation channel placed in the thermal column at a distance of ۹۰ cm from the center of the TRR core has optimal conditions for the implementation of silicon doping. The channel provides a thermal neutron flux in order of ۱.۷۲۱۰۱۲ n.cm-۲.s-۱ which is the least acceptable value to achieve a proposed neutron fluence during the operation cycles of TRR reactor. Also, the channel has the least possible heat deposition inside the silicon ingot of about ۱۹۱ W. In addition, the thermal to fast neutron flux ratio of about ۳۱۱ is enough higher than the determined IAEA limit for NTD.کلیدواژه ها
Silicon ingot, Tehran Research Reactor, Monte Carlo, Neutron transmutation doping, Thermal columnاطلاعات بیشتر در مورد COI
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