Nanostructure growth of fluorine doped zinc oxide

Zinc oxide thin films have been used for transparent electrodes in photoelectric conversion devices namely amorphous silicon solar cells, liquid crystal display, gas discharge display, etc[1-2]. Among transparent conducting oxide films (TCO) of non-stoichiometric and doped oxides (SnO2,In2O3, ZnO, CdO, SnO2:F,In2O3:Sn), zinc oxide was felt important compared with tin oxide and indium oxide due to its stability in hydrogen plasma, which is of unique importance in amorphous and nanocrystalline silicon areas .Though zinc oxide films may be prepared by various techniques, such as: sputtering, vacuum evaporation, CVD, sol gel, etc. films prepared by spray pyrolysis is used because of its simplicity and commercial viability [3]. Non- stoichiometric ZnO, in general, is an n-type material, with a high electrical conductivity due to lack of oxidation. Oxygen deficiency in crystal lattice of zinc oxide can be account for properties revealed in experimental observation [3]. Doping zinc oxide with Ga, In, Cu, Fe and Sn as donor impurities yields films with low sheet resistance. Due to less records on fluorine dopant, this paper describes the results of our study in an attempt to discus about the preparation and characterization of F-doped ZnO thin film nanostructure using spray pyrolysis technique