Fabrication and Electrical characterization of Hybrid Ruddlesden Popper Perovskite/Silicon Heterojunction
- سال انتشار: 1400
- محل انتشار: هفتمین کنفرانس بین المللی دانش و فناوری مهندسی برق مکانیک و کامپیوتر ایران
- کد COI اختصاصی: DMECONF07_121
- زبان مقاله: انگلیسی
- تعداد مشاهده: 270
نویسندگان
Mohammad-Bagher Mohammadzadeh Shamloo
Faculty of Electrical and Computer Engineering, Tarbiat Modares University
Faculty of Electrical and Computer Engineering, Tarbiat Modares University
Department of Physics, University of Tehran
چکیده
During the last few decades, emerging semiconductor organic-inorganic halide perovskite materials used to create solar cells have gotten a lot of interest. In this paper, two-dimensional Ruddlesden-Popper perovskite is synthesized and used to create a silicon-based heterojunction. The junction represents great potential for photodetection and sensing. Current-voltage measurements were used to investigate the electrical properties of the heterojunction. To investigate junction parameters, thermionic emission theory, the Cheung method, along with Nord's approximation, were used. The ideality factor of ۹.۲, obtained from Cheung's method, implies that we are no longer faced with pure thermionic emission in this structure. Measurements of junction I-V in the dark and under illumination show that it has a great deal of potential for optoelectronic applications, especially photodetectors. Under illumination, an estimated Ion/I off ratio of one order of magnitude was observed. Finally, transport mechanisms were investigated using two different bias voltage measurements: low and high. At lower bias voltages, the junction exhibits ohmic carrier transport, however, at higher voltage biases, trap states associated with numerous perovskite grain boundaries induce trap-controlled space charge limited conduction (TCLC).کلیدواژه ها
Charge transport properties، Heterojunction، Photodetector، ۲D Ruddlesden-Popper Perovskiteاطلاعات بیشتر در مورد COI
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