Maryam Karimi - Sadjad Institute for Higher Education, Mashhad, Iran
Mohammad Mojtaba Sheikholeslami
Ehsan Kargaran
Hooman Nabovati

A highly efficient fully integrated passive CMOS rectifier is proposed in this paper. Using four ultra low power and low voltage techniques consist of: Negative to Positive Half Wave Converter (NPHWC), bootstrapped technique, Dynamic Bulk Biasing Regulation (DBBR) and Ultra Low Power Diodes (ULPD) withproper leakage current compensation technique, this new topology is very high efficient in wide input voltage range of both high voltagesand low voltage advanced sub-micron applications simultaneously. Unlike the recently proposed rectifiers, in this new rectifier, for wide range of AC input signal amplitude the power and voltagetransmission efficiency are higher than 90%. New proposed rectifier is applicable for bio-implantable systems with high current demands.The new full-wave rectifier also simulated and optimized only for low voltage advanced sub-micron applications. In |Vin|=0.4V the voltageand power transmission efficiency are 70.3% and 68.3% respectively. These values in |Vin|=0.5V reach to 82% and 69%respectively. This rectifier designed and simulated in 0.18μm standard CMOS technology

Full-Wave-Bridged Rectifier, Passive and ActiveRectifier, NPHWC, ULPBS, Bootstrapped Technique, ULPD,DBBR