Investigation of Double Recessed Gate SiC MESFETs with Different Recessed Lengths
عنوان مقاله: Investigation of Double Recessed Gate SiC MESFETs with Different Recessed Lengths
شناسه ملی مقاله: ICEE19_329
منتشر شده در نوزدهمین کنفرانس مهندسی برق ایران در سال 1390
شناسه ملی مقاله: ICEE19_329
منتشر شده در نوزدهمین کنفرانس مهندسی برق ایران در سال 1390
مشخصات نویسندگان مقاله:
M. Razavi - Electrical Engineering Department, Semnan University, Semnan, Iran
Ali A. Orouji - Electrical Engineering Department, Semnan University, Semnan, Iran
Seyed Ebrahim Hosseini - Electrical Engineering Department, Sabzevar Tarbiat Moallem University, Sabzevar, Iran
خلاصه مقاله:
M. Razavi - Electrical Engineering Department, Semnan University, Semnan, Iran
Ali A. Orouji - Electrical Engineering Department, Semnan University, Semnan, Iran
Seyed Ebrahim Hosseini - Electrical Engineering Department, Sabzevar Tarbiat Moallem University, Sabzevar, Iran
This paper compares the Double Recessed Gate (DRG) Silicon carbide (SiC) based metal semiconductor field effect transistors (MESFETs) with different double recessed gate lengths (Ldrg). We investigate the device performance focusing on breakdown voltage, DC trans-conductance, threshold voltage, short channel effect, drain current, DC output conductance, and gate capacitance with twodimensional and two-carrier device simulations. Our simulation results demonstrate that with increasing the Ldrg in the DRG structure, the saturated drain current, short channel effects and the DC output conductance are reduced and the threshold voltage has positive shift. Increasing the Ldrg in the drain side reduces the gate capacitance and increases the breakdown voltage. Also, increasing the Ldrg in the source side increases the DC trans-conductance
کلمات کلیدی: SiC, MESFET, double recessed gate, simulation
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/153902/