Rana Mirzalou - Islamic Azad University (IAU), Science and Research Branch, Tehran
Abdolreza Nabavi - Tarbiat Modares University, Microelectronics Laboratory, Tehran
Ghafar Darvish - Islamic Azad University (IAU), Science and Research Branch, Tehran

An ultra-wideband (UWB) low-noise amplifier (LNA) with simultaneous noise and distortion cancellation is presented. This LNA utilizes a pMOS in weak inversion for second- and third-order distortion cancellation. By using two inductors, the effective bandwidth for noise/distortion cancellation and input matching are extended. This LNA has been designed in a 0.18-μm CMOS process. The noise figure is 3.8–4.45 dB, IIP3 is 15–20 dBm, IIP2 is 10–16 dBm, and S11 is lower than -15 dB over 5.8–10.6 GHz. The voltage gain is 13.8 dB while drawing 8.3 mA from 1.8 V supply voltage

ultra-wideband (UWB), low-noise amplifier (LNA), noise cancellation, distortion cancellation,input matching