ژاله ابراهیمی نژاد - Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran
سید فرهاد مسعودی - Department of Physics, K.N. Toosi University of Technology, P.O. Box ۱۵۸۷۵-۴۴۱۶, Tehran, Iran
امیرهوشنگ رمضانی - Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran
سمیه عسگری - Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran
- - - Center for Asset Integrity Management, University of Pretoria, Pretoria, South Africa

In the present work, the effect of roughness in resonant tunneling diodes have been considered to track two main goals. At first, the roughness impact on the transport through these heterojunctions has been studied, and then roughness type effect have been also investigated. For calculating the electrical transport, the transfer matrix technique has been used in simulations. Two different standard methods of deposition - Random deposition (RD), and Ballistic deposition (BD)- have been applied to generate two dissimilar rough interfaces. The scattering process cause to reduction of transport probability. The conductivity as a function of voltage has been also calculated. Effect of interface roughness on the peak-to-valley current ratio in the presence of roughness have been discussed. The results show that the scattering affect it significantly. As the applied voltage increase, at first, the value of current reaches to maximum amount, and then with increasing the voltage, the current falls in a negative differential resistance region.

Standard Deposition Model, Transport, Current density, roughness