A study on the dependence of DC electrical properties and nanostructure of Cu thin films on film thickness
محل انتشار: مجله بین المللی ابعاد نانو، دوره: 3، شماره: 3
سال انتشار: 1392
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 124
فایل این مقاله در 10 صفحه با فرمت PDF قابل دریافت می باشد
- صدور گواهی نمایه سازی
- من نویسنده این مقاله هستم
استخراج به نرم افزارهای پژوهشی:
شناسه ملی سند علمی:
JR_IJND-3-3_007
تاریخ نمایه سازی: 24 تیر 1401
چکیده مقاله:
This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system was employed for Hall Effect analysis. The grain size calculated from XRD and AFM, roughness, resistivity, hall coefficient, carrier concentration and mobility were plotted as a function of thickness. The result showed amorphous structure for ۲۰ nm thickness, but with increasing the film thickness, Cu(۱۱۱) preferred orientation was observed. The grain size, roughness and concentration of carriers increased and resistivity, hall coefficient and mobility decreased with increasing the film thickness. The result of copper thin films electrical investigation showed the value of resistivity and concentrations of carriers come to bulk state value at approximately ۱۶۰ nm thickness.
کلیدواژه ها:
نویسندگان
K. Khojier
Department of Physics, Chalous branch, Islamic Azad University, Chalous, Iran.
H. Savaloni
Department of Physics, University of Tehran, North-Kargar St., Tehran, Iran.