Two Efficient Ternary Adder Designs Based On CNFET Technology

سال انتشار: 1400
نوع سند: مقاله ژورنالی
زبان: انگلیسی
مشاهده: 156

فایل این مقاله در 10 صفحه با فرمت PDF قابل دریافت می باشد

استخراج به نرم افزارهای پژوهشی:

لینک ثابت به این مقاله:

شناسه ملی سند علمی:

JR_CKE-4-1_003

تاریخ نمایه سازی: 25 خرداد 1401

چکیده مقاله:

Full adder is one of the essential circuits among the various processing elements used in VLSI and other technologies circuits, because they are mainly employed in other arithmetic circuits, such as multi-digit adders, subtractors, and multipliers. This paper proposes two efficient ternary full adders based on Carbon Nanotube Field-Effect Transistor (CNFET) technology. Using the adjustable nanotube diameter in CNFETs, these adders utilize arbitrary threshold voltages so that arithmetic operations can be performed with a radix of ۳. For performance analysis, the proposed adder circuits are simulated in HSPICE with ۳۲nm CNFET technology. In these simulations, different inputs are applied at different frequencies with different load capacitances placed at the output. Simulation results have shown that the proposed adders not only improve the speed, power consumption, and Power Delay Product (PDP) of the existing state-of-the-art designs but also improve the design complexity by reducing the number of transistors contained within the circuit.

نویسندگان

Masoud Mahjoubi

Computer engineering department, Amirkabir university of technology, Gramsar campus, Garmsar, Iran

Morteza Dadashi

Computer engineering department, Amirkabir university of technology, Gramsar campus, Garmsar, Iran

Kooroush Manochehri

Computer engineering department, Amirkabir university of technology, Garmsar campus, Garmsar, Iran

Saadat Pourmozafari

Computer engineering department, Amirkabir university of technology, Gramsar campus, Garmsar, Iran

مراجع و منابع این مقاله:

لیست زیر مراجع و منابع استفاده شده در این مقاله را نمایش می دهد. این مراجع به صورت کاملا ماشینی و بر اساس هوش مصنوعی استخراج شده اند و لذا ممکن است دارای اشکالاتی باشند که به مرور زمان دقت استخراج این محتوا افزایش می یابد. مراجعی که مقالات مربوط به آنها در سیویلیکا نمایه شده و پیدا شده اند، به خود مقاله لینک شده اند :
  • S. Bala and M. Khosla, "Electrostatically doped tunnel CNTFET model ...
  • S. Satyanarayana, S. R. Shailendra, V. Ramakrishnan, and S. Sriadibhatla, ...
  • M. H. Moaiyeri, R. F. Mirzaee, K. Navi, and O. ...
  • G. Deng and C. Chen, "Hybrid CMOS-SET arithmetic circuit design ...
  • F. Farzaneh, R. F. Mirzaee, and K. Navi, "A novel ...
  • P. Kumar and S. Singh, "Optimization of the area efficiency ...
  • N. Maity, R. Maity, S. Maity, and S. Baishya, "Comparative ...
  • S. S. Ensan, M. H. Moaiyeri, B. Ebrahimi, S. Hessabi, ...
  • S. Lin, Y.-B. Kim, and F. Lombardi, "CNTFET-based design of ...
  • F. Sharifi, A. Panahi, M. H. Moaiyeri, H. Sharifi, and ...
  • F. Sharifi, M. H. Moaiyeri, K. Navi, and N. Bagherzadeh, ...
  • M. D. Gavaber, M. Poorhosseini, and S. Pourmozafari, "Novel architecture ...
  • M. Maleknejad, S. Mohammadi, S. M. Mirhosseini, K. Navi, H. ...
  • E. Shahrom and S. A. Hosseini, "A new low power ...
  • M. D. Gavaber, K. M. Kalantari, and S. Pourmozafari, "Design ...
  • A. Karimi, A. Rezai, and M. M. Hajhashemkhani, "Ultra-Low Power ...
  • G. S. Kumar, A. Singh, and B. Raj, "Design and ...
  • P. K. Patel, M. Malik, and T. K. Gupta, "Reliable ...
  • P. Keshavarzian and R. Sarikhani, "A novel CNTFET-based ternary full ...
  • B. Srinivasu and K. Sridharan, "Carbon nanotube FET-based low-delay and ...
  • K. Sridharan, S. Gurindagunta, and V. Pudi, "Efficient multiternary digit ...
  • M. H. Moaiyeri, M. Nasiri, and N. Khastoo, "An efficient ...
  • A. Dhande and V. Ingole, "Design and implementation of ۲ ...
  • S. L. Hurst, "Multiple-valued logic? its status and its future," ...
  • S. K. Sahoo, G. Akhilesh, R. Sahoo, and M. Muglikar, ...
  • M. H. Moaiyeri, A. Doostaregan, and K. Navi, "Design of ...
  • J. Deng and H.-S. P. Wong, "A compact SPICE model ...
  • نمایش کامل مراجع