Quantum analysis of drain source curr ent of Gate-All-Around CdSe Na nowire F ield-Effec t Transistor

The gate-all-arou nd nanowire field-effect transistors (GAA NWF ETs) are a promising o ption for nanometer transistors and recently th ey are being studied wi dely[۱-۳]. Extensive research has b een carried out on the GAA NWFETs made o f the semic onductors g roup IV such as silicon [۱, ۲], group III-V such as InAs and InSb [۲, ۳], and group II-VI such as ZnO [۴]. CdSe is another option to construct GAA NWF ETs [۵, ۶]. T he electron effective mass in the C dSe is less t han that in Si, and its nanowire can be covered with SiO۲ [۵, ۶]. In this paper, we specifically investigate the b ias dependence of the drain source current in a GAA CdSe NWF ET.Device Structure :The gate-all-arou nd CdSe nanowire field-effect tran sistor oxide layer is assumed to be SiO۲ with a thickness of dox=۵ nm . The corr esponding Fermi levels would be EFS=í۰.۱۶ e V, at thermal equilibrium. In this transistor, the channel diameter and length are taken to be dch=۵ nm and Lch=۱۰ nm , respectively.

کلیدواژه ها:

CdSe nanowire ، NEGF ، transmission pr obability.