An Investig ation of g rowth time effect on morphological an d structural properties of SiO۲ na nowires d eposited by thermal evaporation method

Silicon oxide (SiO۲) has bee n attracted due to its various pot ential appli cations in optical sensors, with high sensitivity, solar cells and field effect transistors [۱, ۲]. In this work, w e are intere sted to inve stigate the effect of g rowth time (۲.۵ and ۳.۰ hours; sample a and b, respectively) on m orphologic al and structural properti es of SiO۲ n anostructure samples. Experiments: In thi s study ۰.۳ grams silicon monoxid e powder (purity ۹۹.۸ %, Aldrich) was used a s the source material i n an alumina boat placed at the middle of the horizontal quartz tube. The growth temperature and vacu um pressure were ۱۱۵۰ and ۱۰-۶ torr, respectively. Argon was used as the carrier gas at a flow rate of ۱۰ ۰ sccm to grow the thin layers on p -Si (۱۰۰) wafers, ۱۰ cm apart from the boat. Through this study we have characterized the grown samples by SEM, XRD and EDS methods .

کلیدواژه ها:

Silicon Oxide ، Na nowire ، The rmal Evaporation