O ptical and Structu ral Prope rties of Zn S Quantu m Dots Fabricated by Sonochemical Method

Zinc su lfide (ZnS), as an important semiconductor com pound with wide band gap energy of ۳.۷ eV, has attracted much resear ch interest because of its unique properties and potential applications [۱]. It has a w ide range of applicati ons covering optical de vices, ultraviolet sensors , lasers, diodes, and photocatalysts in pollutant treatment [۲-۴]. In this study, ZnS NPs were f abricated via a sonochemical method. The qu antum dots were charac terized by X-ray diffract ion (XRD), transmission electron microscopy (TEM), hig h resolution TEM (HRTEM), Fourier transform infrared spec troscopy (FTIR), and UV–vis absor ption spectroscopy.

کلیدواژه ها:

Zinc sulphide ، sem iconductor ، band gap energy ، sono chemical me thod.