Energetic of single-walled armchair, zigzag, and chiral silicon nanotube and investigate of the effect of stress on melting point with use molecular dynamic (MD) simulation
عنوان مقاله: Energetic of single-walled armchair, zigzag, and chiral silicon nanotube and investigate of the effect of stress on melting point with use molecular dynamic (MD) simulation
شناسه ملی مقاله: ISPTC15_0049
منتشر شده در پانزدهمین سمینار شیمی فیزیک ایران در سال 1391
شناسه ملی مقاله: ISPTC15_0049
منتشر شده در پانزدهمین سمینار شیمی فیزیک ایران در سال 1391
مشخصات نویسندگان مقاله:
J Davoodi - Department of Physic, University of Zanjan, zanjan, iran
M Soltani - Department of Physic, University of Zanjan, zanjan, iran
خلاصه مقاله:
J Davoodi - Department of Physic, University of Zanjan, zanjan, iran
M Soltani - Department of Physic, University of Zanjan, zanjan, iran
In this paper, are have performing simulations molecular dynamic (MD) simulation within an isobaric- isothermal ensemble. The tersoff potential many-body interatomic potential[۱] was used to model the energetic and dynamics of the stress on single wall silicon nanotubes (SWSiNTs), Our aim has been to calculate the melting temperature of SWSiNTs at the various radius size and investigate effect of stress on SWSiNTs too
کلمات کلیدی: MD Simulation, Silicon Nanotube, Tersoff Potential, Stress, Melting Point
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/1363365/