Two-Dimensional Physical and Numerical Modelling of Copper (II)-Oxide/Silicon Hetero Junction Bipolar Transistor
- سال انتشار: 1400
- محل انتشار: مجله سرامیک های پیشرفته، دوره: 7، شماره: 2
- کد COI اختصاصی: JR_ACERPT-7-2_005
- زبان مقاله: انگلیسی
- تعداد مشاهده: 158
نویسندگان
MS, Department of Electrical Engineering, K. N. Toosi University of Technology, Tehran, Tehran, Iran
MS, Department of Electrical Engineering, K. N. Toosi University of Technology, Tehran, Tehran, Iran
MS, Department of Electrical Engineering, K. N. Toosi University of Technology, Tehran, Tehran, Iran
Professor, Department of Electrical Engineering, K. N. Toosi University of Technology, Tehran, Tehran, Iran
چکیده
Flexible and printed electronics have been widely applied due to their low cost, scalability in manufacturing, and usability in biosensors as well as wearable electronics. However, there are some limitations on fabrication of these devices including thermal limitations. Thermal constraints are of significance since ion implantation at high temperatures is one of the most important stages of fabrication; therefore, despite these limitations, fabrication of flexible BJT is practically impossible through conventional methods. In this study, copper oxide was used for the collector and emitter area of Double Heterojunction Bipolar Transistor (DHBT) due to the low-temperature deposition of copper oxide through the printing method, and the ability to adjust the doping according to the deposition conditions. DC and high-frequency specifications of two transistors with PNP and NPN structures were simulated using two-dimensional semiconductor simulator atlas module of SILVACO software.کلیدواژه ها
Flexible and printed electronics, Ion-implantation, Double heterojunction bipolar transistor, Simulation, low-Temperature, deposition, Copper oxide, SILVACOاطلاعات بیشتر در مورد COI
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