The effect of Spin-orbit Coupling on the Electrical Properties of Monolayer Buckled InSb

The electronic properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. The band structures of InSb with and without spin-orbit coupling (SOC) consideration are compared and the SOC modification on the electronic properties are investigated. The bandgap demonstrates a maximum at small compressive strain and transits to metal at large tensile strain.