Ambipolar Current and Stability Enhancement Tunneling Field-Effect Transistor for Stable High-Speed Switching Relay
سال انتشار: 1399
نوع سند: مقاله کنفرانسی
زبان: انگلیسی
مشاهده: 300
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شناسه ملی سند علمی:
ELEMECHCONF06_305
تاریخ نمایه سازی: 22 آذر 1399
چکیده مقاله:
Using calibrated simulations, we report a detailed study of the tunneling field-effect transistor (TFET) with the drain pocket as a means to improve the subthreshold swing, switching state current ratio, ambipolar conduction and stability. By inserting the n-type pocket layer between the channel and drain, off- state current is reduced by about 45 times compared with the conventional SOI TFETs, respectively, due to energy band modification imposed by the pocket doping. The suggested device structure can eliminated the ambipolar current up to a gate voltage of -0.25 V. Also, the variation of the transfer characteristics with the drain pocket parameters in terms of doping concentration and width were investigated to optimize the device performance. Additionally, the stability performance is studied considering pocket width and doping variation. The results show that proposed TFET is a promising candidate to strengthen the performance of stable high-speed switching relay.
کلیدواژه ها:
Ambipolar current ، Stability ، Tunneling field-effect transistor (TFET) ، Stable high-speed switching relay.
نویسندگان
Mohamad Tolue Khayami
Khorasan Regional Electrical Company, Mashhad ۹۱۷۳۵۱۸۵, Iran
Saeid Marjani
Khorasan Regional Electrical Company, Mashhad ۹۱۷۳۵۱۸۵, Iran