Influence of Quantum Well Structure on Thermal Behavior of AlGaAs-Based Laser Diode

The high thermal stability 730-810 nm AlGaAs/ AlGaAs quantum well lasers with symmetric waveguide structure are theoretically designed using simulation software PICS3D. The simulator self-consistently combines 3D simulation of carrier transport, self-heating, and optical waveguiding. Through the simulation, the optical and electrical performances of laser diodes with different quantum well structures are studied to increase thermal stability of the proposed device. In this study, Al composition of AlxGa1−xAs, number and thickness of quantum well are varied, then the temperature and heat power distribution are investigated. Numerical results confirm that the active region consists of 2 quantum wells with Al0.08Ga0.92As material compound and 5 nm thickness operates at the lowest temperature, so it is considered as the optimal structure.

کلیدواژه ها:

AlGaAs/ AlGaAs laser diode ، Quantum well ، Simulation ، Temperature ، Generated heat ، PICS3D.