Radiation Hardening by Design for Nonvolatile Magnetic Flip-Flops

Advanced digital circuits suffer from rapidly increase in leakage current and radiation weakness of nanometer CMOS technologies. Hybrid design of spintronic/CMOS circuits offers attractive features such as high density, low static power consumption, and nonvolatility. For these advantages, this technology is considered to be an alternative for future CMOS technologies in VLSI design. However, susceptibility of CMOS transistors to radiation induced soft errors is still a concerning problem in such hybrid designed circuits. In this paper, we proposed a low power, nonvolatile and soft error immune magnetic flip-flop (MFF) that is capable of tolerating any particle strike and also has higher performance than the recent previous designs.

کلیدواژه ها:

Magnetic Flip-Flop (MFF) ، Magnetic Tunnel Junction (MTJ) ، fault tolerance ، Single-Event Upset (SEU) ، Single-Event Effect (SEE)